Intrinsic hole mobility and trapping in a regioregular poly(thiophene)
Intrinsic hole mobility and trapping in a regioregular poly(thiophene)
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DOI：
10.1103/physrevb.70.115311
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发表时间：
2004-07
影响因子：
3.7
通讯作者：
A. Salleo;T. Chen;A. Voelkel;Y. Wu;P. Liu;B. Ong;R. Street
中科院分区：
文献类型：
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作者：
A. Salleo;T. Chen;A. Voelkel;Y. Wu;P. Liu;B. Ong;R. Street
报道了用区域规则聚噻吩半导体（PQT-12）制成的高性能薄膜晶体管（TFT）的输运特性。的室温场效应迁移率的设备之间变化0.004 cm 2/V s和0.1 cm 2/V s，并通过材料的热处理，这修改了结构顺序控制。研究了薄膜晶体管的输运特性随温度的变化。在T<200 K时，所有薄膜的场效应迁移率都是热激活的，激活能取决于沟道中的电荷密度。的实验数据进行比较，理论模型的运输，我们认为，一个模型的基础上存在的流动性边缘和指数分布的陷阱提供了最好的解释的数据。室温迁移率的差异是由于薄膜中的结构无序引起的价带边缘的浅局域态分布的宽度不同。的自由载流子迁移率的移动的状态的有序区域的膜是相同的，在所有的结构修改，估计为1和4厘米2/V秒之间。
The transport properties of high-performance thin-film transistors (TFT) made with a regio-regular poly(thiophene) semiconductor (PQT-12) are reported. The room-temperature field-effect mobility of the devices varied between 0.004 cm2/V s and 0.1 cm2/V s and was controlled through thermal processing of the material, which modified the structural order. The transport properties of TFTs were studied as a function of temperature. The field-effect mobility is thermally activated in all films at T<200 K and the activation energy depends on the charge density in the channel. The experimental data is compared to theoretical models for transport, and we argue that a model based on the existence of a mobility edge and an exponential distribution of traps provides the best interpretation of the data. The differences in room-temperature mobility are attributed to different widths of the shallow localized state distribution at the edge of the valence band due to structural disorder in the film. The free carrier mobility of the mobile states in the ordered regions of the film is the same in all structural modifications and is estimated to be between 1 and 4 cm2/V s.