Particle pixel detectors in high-voltage CMOS technology—New achievements
Particle pixel detectors in high-voltage CMOS technology—New achievements
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高压CMOS技术的粒子像素探测器——新成果
DOI：
10.1016/j.nima.2010.11.090
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发表时间：
2011
影响因子：
1.4
通讯作者：
P. Fischer
中科院分区：
文献类型：
--
作者：
I. Perić;C. Kreidl;P. Fischer
采用标准高压CMOS技术的粒子像素探测器是一种新的探测器系列，可以实现具有良好时间分辨率的低成本耐辐射探测器。为了测试这个概念，我们实现了三种检测器变体。第一种变体使用简单的四晶体管像素电子器件，允许滚动快门读出。第二种变体实现了复杂的CMOS像素电子器件，具有像素级的粒子命中检测和二进制读出。第三变型使用基于电容性芯片到芯片信号传输的读出。在本文中，我们将介绍最近的实验结果。
Particle pixel detectors in standard high-voltage CMOS technology are a new detector family that allows implementation of low-cost radiation-tolerant detectors with good time resolution. In order to test the concept we have implemented three detector variants. The first variant uses simple four-transistor pixel electronics that allows the rolling-shutter readout. The second variant implements complex CMOS pixel electronics with particle hit detection on pixel level and binary readout. The third variant uses the readout based on the capacitive chip-to-chip signal transmission. In this paper we will present the recent experimental results.