Crucial role of interfacial s-d exchange interaction in the temperature dependence of tunnel magnetoresistance
Crucial role of interfacial s-d exchange interaction in the temperature dependence of tunnel magnetoresistance
复制标题
界面 s-d 交换相互作用在隧道磁阻温度依赖性中的关键作用
DOI：
10.1103/physrevb.104.l180403
复制
发表时间：
2021
影响因子：
3.7
通讯作者：
and Y. Miura
中科院分区：
文献类型：
--
作者：
K. Masuda;T. Tadano;and Y. Miura
隧道磁电阻（TMR）是最重要的自旋电子学现象之一，但其在有限温度下的衰减是其应用的一个严重障碍。在这里，我们揭示了一个至关重要的决定因素的缺点，即，在界面铁磁层的传导和局域电子之间的交换相互作用。通过计算Fe/MgO/Fe（001）体系的TMR比随温度的变化关系，我们发现由于交换作用引起的自旋翻转散射，TMR比随温度的升高而显著降低。本文还用非经验方法讨论了耦合常数的材料依赖性。
The tunnel magnetoresistance (TMR) is one of the most important spintronic phenomena but its reduction at finite temperature is a severe drawback for applications. Here, we reveal a crucial determinant of the drawback, that is, theexchange interaction between conductionand localizedelectrons at interfacial ferromagnetic layers. By calculating the temperature dependence of the TMR ratio in Fe/MgO/Fe(001), we show that the obtained TMR ratio significantly decreases with increasing temperature owing to the spin-flip scattering in thestate induced by theexchange interaction. The material dependence of the coupling constantis also discussed on the basis of a nonempirical method.