Moiré‐Potential‐Induced Band Structure Engineering in Graphene and Silicene
Moiré‐Potential‐Induced Band Structure Engineering in Graphene and Silicene
复制标题
石墨烯和硅烯中的莫尔势-诱导能带结构工程
作者：
Mengting Zhao;Jincheng Zhuang;Qunfeng Cheng;Weichang Hao;Yi Du
莫尔图案是由一种相对晶格常数或错位的周期性图案投影到另一种周期性图案上的结果，它为改变原始材料的电子性质提供了巨大的周期势能。本文综述了莫尔超晶格对石墨烯和硅烯电子结构影响的最新研究进展，这两种材料都具有蜂窝状晶格。层间相互作用引入了Moiré周期势来实现丰富的现象，包括新一代Dirac锥、两组Dirac锥交点处出现的Van Hove奇点(VHS)、半填充态下的类Mott绝缘行为、非传统超导电性以及具有非平凡边缘态的电子Kagome晶格和平带。从理论预测和实验测量两方面讨论了由扭角和屈曲程度决定的层间耦合强度在这些奇异性质中的作用，最后讨论了该领域面临的挑战和展望。
A moiré pattern results from the projection of one periodic pattern to another with relative lattice constant or misalignment and provides great periodic potential to modify the electronic properties of pristine materials. In this Review, recent research on the effect of the moiré superlattice on the electronic structures of graphene and silicene, both of which possess a honeycomb lattice, is focused on. The moiré periodic potential is introduced by the interlayer interaction to realize abundant phenomena, including new generation of Dirac cones, emergence of Van Hove singularities (vHs) at the cross point of two sets of Dirac cones, Mott‐like insulating behavior at half‐filling state, unconventional superconductivity, and electronic Kagome lattice and flat band with nontrivial edge state. The role of interlayer coupling strength, which is determined by twist angle and buckling degree, in these exotic properties is discussed in terms of both the theoretical prediction and experimental measurement, and finally, the challenges and outlook for this field are discussed.