Structure, optical and electrical properties of (Cu1-xAgx)(2)ZnSn(S,Se)(4) alloy thin films for photovoltaic application
Structure, optical and electrical properties of (Cu1-xAgx)(2)ZnSn(S,Se)(4) alloy thin films for photovoltaic application
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光伏应用(Cu1-xAgx)(2)ZnSn(S,Se)(4)合金薄膜的结构、光电性能
DOI：
10.1016/j.mssp.2018.03.014
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发表时间：
2018
影响因子：
4.1
通讯作者：
Zhang Bingye
中科院分区：
文献类型：
--
作者：
Jiang Yuhong;Yao Bin;Li Yongfeng;Ding Zhanhui;Luan Hongmei;Jia Jinhuan;Li Yan;Shi Kun;Sui Yingrui;Zhang Bingye
采用简单溶液法制备了(Cu1-xAgx)2ZnSn2(S，Se)4(CaZTSSe)(0 ≤ x ≤ 0.2 5)合金薄膜，研究了Ag含量对薄膜的结构、形貌、禁带宽度和电学性能的影响。结果表明，Cu2ZnSn2(S，Se)4(CZTSSe)薄膜中的Cu+离子被Ag+离子取代，形成了均匀的CaZTSSe(0 ≤ x ≤ 0.2 5)合金薄膜。Ag/(Cu+Ag)比对CaZTSSe(0 ≤ x ≤ 0.2 5)合金薄膜的晶体结构和禁带宽度有影响。结果表明，Ag的加入加速了晶粒的长大，增大了晶粒尺寸。CaZTSSe合金薄膜的光学带隙可在x = 0~x = 0.15的As-Ag含量范围内连续可调。霍尔测量结果表明，所有的CAZTSSe合金薄膜都具有p型电导，空穴浓度随着Ag含量的增加而降低。
We fabricated the (Cu1-xAgx)2ZnSn(S,Se)4(CAZTSSe) (0 ≤ x ≤ 0.25) alloy thin films by a simple solution approach combined with a post-selenization technique, and investigated the influence of Ag contents on structure, morphology, band gap as well as electrical property of CZTSSe thin films. The results showed that Cu+cation in Cu2ZnSn(S,Se)4(CZTSSe) films was replaced by Ag+cation, forming homogeneous CAZTSSe (0 ≤ x ≤ 0.25) alloy thin films. The crystal structure and the band gap of CAZTSSe (0 ≤ x ≤ 0.25) alloy thin films are influenced by Ag/(Cu+Ag) ratios. The incorporation of Ag is found to accelerate the grain growth and increase the grain size. The optical band gap of CAZTSSe alloy thin films can be continuously tuned in the range of as Ag content from x = 0 to x = 0.15. Furthermore, Hall measurement results indicate that all CAZTSSe alloy thin films showed p-type conductivity and hole concentration decreased with the increasing the Ag contents.