GENERALIZED SCALING THEORY AND ITS APPLICATION TO A 1/4 MICROMETER MOSFET DESIGN
GENERALIZED SCALING THEORY AND ITS APPLICATION TO A 1/4 MICROMETER MOSFET DESIGN
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DOI：
10.1109/t-ed.1984.21550
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发表时间：
1984-01-01
影响因子：
3.1
通讯作者：
DENNARD, RH
中科院分区：
文献类型：
--
作者：
BACCARANI, G;WORDEMAN, MR;DENNARD, RH
在这篇文章中，我们提出了一个广义标度理论，它允许FET物理尺寸和外加电压的独立标度，同时仍然保持电场图案的形状不变。因此，即使场强被允许增加，二维效应也保持在控制之下。由此产生的设计灵活性允许设计具有四分之一微米沟道长度的FET，无论是在室温下还是在液氮温度下。然后详细研究了定标理论的物理局限性，得出了在0.25-µm沟道长度时没有达到极限FET性能的结论。如果实现某些技术突破，未来可能会有进一步的改进。
In this paper we present a generalized scaling theory which allows for an independent scaling of the FET physical dimensions and applied voltages, while still maintaining constant the shape of the electric-field pattern. Thus two-dimensional effects are kept under control even though the intensity of the field is allowed to increase. The resulting design flexibility allows the design of FET's with quarter-micrometer channel length to be made, for either room temperature or liquid-nitrogen temperature. The physical limitations of the scaling theory are then investigated in detail, leading to the conclusion that the limiting FET performances are not reached at the 0.25-µm channel length. Further improvements are possible in the future, provided certain technology breakthroughs are achieved.