Structural properties of ZnO grown on GaN/sapphire templates
Structural properties of ZnO grown on GaN/sapphire templates
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DOI：
10.1149/1.2428413
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发表时间：
2007-01-01
影响因子：
--
通讯作者：
Tripathy, S.
中科院分区：
文献类型：
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作者：
Zhou, H. L.;Chua, S. J.;Tripathy, S.
采用改进的热蒸发工艺在GaN/蓝宝石衬底上制备了氧化锌纳米棒。用扫描电子显微镜、显微拉曼光谱和X射线衍射仪对所合成的氧化锌纳米棒和薄膜进行了表征。当生长温度升高到800℃时，氧化锌的形貌由纳米棒转变为连续的薄膜。进一步升高生长温度会导致氧化锌沿(0001)方向的生长速率降低。显微光致发光测量表明，纳米棒和薄膜的紫外带边发射峰都在378 nm附近。这种结构的实现对制备ZnO/GaN混合光电子器件具有一定的参考价值。(C)2007年电化学会。
ZnO nanorods were synthesized on GaN/sapphire substrates using a modified thermal-evaporation process. The as-synthesized ZnO nanorods and thin films were characterized using scanning electron microscopy, micro-Raman, and X-ray diffraction techniques. The morphology of the ZnO changes from nanorods to continuous thin films when the growth temperature increases to 800 degrees C. Further increase in the growth temperature leads to a lower growth rate of ZnO along the (0001) direction. Micro-photoluminescence measurements show ultraviolet band-edge emission peaks around 378 nm from both nanorods and thin films. Realization of such ZnO structures may be useful for the fabrication of hybrid ZnO/GaN optoelectronic devices. (c) 2007 The Electrochemical Society.