Thermal stabilization and deterioration of the WC/p‐type diamond (100) Schottky‐barrier interface
Thermal stabilization and deterioration of the WC/p‐type diamond (100) Schottky‐barrier interface
复制标题
WC/p型金刚石(100)肖特基势垒界面的热稳定性和劣化
DOI：
10.1002/pssa.201431216
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发表时间：
2014
期刊：
影响因子：
--
通讯作者：
and Y. Koide
中科院分区：
文献类型：
--
作者：
A. Fiori;T. Teraji;and Y. Koide
在p型金刚石上制造的碳化钨（WC）肖特基势垒二极管的整流能力被证实高达800 K。在这项研究中，电性能被用来支持在高温下的WC/金刚石界面反应的调查。在加热到500 K以上之前，界面不是热稳定的。该界面已通过在550-600 K范围内的真空下退火而稳定。这种处理产生的二极管在3 V时具有106的大整流系数，在100 V阻断状态下，当工作温度低于600 K时，漏电流为10− 12安培。当温度超过600 K时，整流系数逐渐变差.
Rectification abilities of tungsten carbide (WC) Schottky‐barrier diodes fabricated on p‐type diamond were confirmed up to 800 K. In this study, electrical properties were used to support the investigation of the WC/diamond interface reaction under elevated temperature. Before heating above 500 K, the interface was not thermally stable. The interface has been stabilized by mean of an annealing under vacuum in the 550–600 K range. This treatment has produced diodes exhibiting large rectification factors of 106at 3 V, and low leakage currents of 10−12amps at 100 V in the blocked state, when the operation temperature was below 600 K. However, rectification factors were gradually worsened, while the temperature was exceeding 600 K.