Synthesis of a novel A-b-(B-co-C)-type terpolymer with a regioregular poly(3-hexylthiophene) segment and its application to intrinsically stretchable transistor memory
Synthesis of a novel A-b-(B-co-C)-type terpolymer with a regioregular poly(3-hexylthiophene) segment and its application to intrinsically stretchable transistor memory
复制标题
具有区域规则性聚(3-己基噻吩)链段的新型A-b-(B-co-C)型三元共聚物的合成及其在本质可拉伸晶体管存储器中的应用
DOI：
10.1016/j.matchemphys.2022.125911
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发表时间：
2022
影响因子：
4.6
通讯作者：
Higashihara Tomoya
中科院分区：
文献类型：
--
作者：
Inagaki Shin;Lin Yan-Cheng;Tanaka Hisakazu;Koganezawa Tomoyuki;Chen Wen-Chang;Higashihara Tomoya
迄今为止，已经开发出多种具有高拉伸性的有机半导体，用于可穿戴电子设备。然而，仍然存在重复拉伸/释放循环造成不可逆损坏的问题，导致器件的使用寿命较短。本研究通过铜催化的叠氮-炔环加成反应成功合成了一种新型A-b-(B-co-C)型三元共聚物，其中A和B-co-C分别是立体规则性聚(3-己基噻吩)(P3HT)和聚(丙烯酸正丁酯-共-丙烯酸)链段。 具有叠氮部分的α-链端官能化P3HT和具有炔部分的α-链端官能化聚(丙烯酸正丁酯-丙烯酸叔丁酯)，然后用三氟乙酸对叔丁基进行脱保护。三元共聚物薄膜的 AFM 和 OM 图像显示，即使拉伸至 100% 也没有形成裂纹。这可能是由于共聚物链段中低Tg诱导型丙烯酸正丁酯和氢键诱导型丙烯酸重复单元的协同效应。此外，使用三元聚合物薄膜的有机晶体管存储器的结果表明，转移/拉伸的驻极体可以保持其器件性能，并通过应用电写入/擦除过程产生稳定的双极电荷捕获。
To date, a variety of organic semiconductors with high stretchability have been developed for applications in wearable electronic devices. However, there is still a problem of irreversible damage by repeated stretching/releasing cycles, resulting in a low lifetime for the devices. In this study, a novel A-b-(B-co-C)-type terpolymer, where A and B-co-C were regioregular poly(3-hexylthiophene) (P3HT) and poly(nbutyl acrylate-co-acrylic acid) segments, respectively, was successfully synthesized by the copper-catalyzed azide-alkyne cycloaddition reaction of α-chain-end-functionalized P3HT with an azide moiety and α-chain-end-functionalized poly(nbutyl acrylate-co-tbutyl acrylate) with an alkyne moiety, followed by deprotection oftbutyl groups with trifluoroacetic acid. The AFM and OM images of the terpolymer films showed that no cracks formed even when stretched up to 100%. This may be due to the synergistic effect of the lowTg-induciblenbutyl acrylate and hydrogen-bonding-inducible acrylic acid repeating units in the copolymer segment. In addition, the results of organic transistor memory using terpolymer thin films showed that the transferred/stretched electrets could preserve their device performance and produce stable bipolar charge trapping by applying electrical writing/erasing processes.