A Dual-Band Outphasing Power Amplifier Based on Noncommensurate Transmission Line Concept
A Dual-Band Outphasing Power Amplifier Based on Noncommensurate Transmission Line Concept
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DOI：
10.1109/tmtt.2020.2995588
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发表时间：
2020-06
影响因子：
4.3
通讯作者：
Weiwei Wang;Shichang Chen;Jialin Cai;X. Zhou;W. Chan;Gaofeng Wang;Q. Xue
中科院分区：
文献类型：
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作者：
Weiwei Wang;Shichang Chen;Jialin Cai;X. Zhou;W. Chan;Gaofeng Wang;Q. Xue
提出了一种基于两条非公度传输线的双频异相功率放大器的设计方法。所设计的NCTL被用来取代传统设计中的强制电抗补偿和阻抗匹配网络。因此，可以在不牺牲负载调制效果的情况下大大降低组合器的整体复杂性。为了支持在两个不同的频率下的操作，概念性的NCTL进一步使用两个双频带的双负载传输线来实现。给出了全面的理论分析，以描述所提出的方案，并说明如何确定的基本元件的电气参数。作为一个概念的证明，一个OPA的原型工作在2.6和3.5 GHz的制造。基于两个10 W GaN高电子迁移率晶体管（HEMT）的PA实现了44.8和44.2 dBm的最大输出功率，以及74.5%和62.1%的峰值漏极效率在连续波激励下，在这两个独立的频率。在6 dB输出回退点处，相应的效率分别达到63.8%和54.9%。
This article proposes a design methodology of dual-band outphasing power amplifier (OPA) based on two noncommensurate transmission lines (NCTLs). The devised NCTLs are used to replace the imperative reactance compensation and impedance matching networks in a conventional design. In virtue of this, the overall complexity of the combiner can be greatly reduced without sacrificing the load modulation effect. To support operations at two distinct frequencies, the conceptual NCTLs are further realized using two dual-band stub-loaded transmission lines. Comprehensive theoretical analysis is given to describe the proposed scheme and to illustrate how the electrical parameters of essential elements are determined. As a proof of concept, an OPA prototype operating at 2.6 and 3.5 GHz is fabricated. The implemented PA based on two 10-W GaN high electron mobility transistor (HEMTs) achieves 44.8 and 44.2-dBm maximum output power, and 74.5% and 62.1% peak drain efficiencies under continuous wave excitation at these two independent frequencies. At 6-dB output back-off points, the corresponding efficiencies reach 63.8% and 54.9%, respectively.