InAs/InP Quantum Dots in Etched Pits by Droplet Epitaxy in Metalorganic Vapor Phase Epitaxy

InAs/InP Quantum Dots in Etched Pits by Droplet Epitaxy in Metalorganic Vapor Phase Epitaxy
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DOI：
10.1002/pssr.202000173
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发表时间：
2020-06
期刊：
physica status solidi (RRL) – Rapid Research Letters
影响因子：
--
通讯作者：
E. Sala;Young In Na;M. Godsland;A. Trapalis;J. Heffernan
E. Sala;Young In Na;M. Godsland;A. Trapalis;J. Heffernan
中科院分区：
其他
文献类型：
--
作者：
E. Sala;Young In Na;M. Godsland;A. Trapalis;J. Heffernan

文献摘要

相似文献

研究了在金属有机气相外延 (MOVPE) 反应器中通过液滴外延在 InP(100) 上生长 InAs 量子点 (QD)。研究了不同基底温度下铟滴的形成，并首次在 MOVPE 条件下观察到纳米孔的自发形成。铟滴在不同温度的砷流下结晶成量子点。当温度高于 500 °C 时，QD 附近会发生局部蚀刻，显示出意想不到的形态，这种形态强烈依赖于结晶条件。对此类量子点进行结构和光学研究，并通过低温微光致发光检测电信 C 波段中单个量子点的发射。
The growth of InAs quantum dots (QDs) on InP(100) via droplet epitaxy in a metalorganic vapor phase epitaxy (MOVPE) reactor is studied. Formation of indium droplets is investigated with varying substrate temperature, and spontaneous formation of nanoholes is observed for the first time under MOVPE conditions. Indium droplets are crystallized into QDs under arsenic flow at different temperatures. For temperatures greater than 500 °C, a local etching takes place in the QD vicinity, showing an unexpected morphology which is found to be strongly dependent on the crystallization conditions. Such QDs are structurally and optically investigated and emission from single QDs in the telecom C‐band is detected via microphotoluminescence at low temperature.