Very-high-speed selector IC using InP/InGaAs heterojunction bipolar transistors
Very-high-speed selector IC using InP/InGaAs heterojunction bipolar transistors
复制标题
使用 InP/InGaAs 异质结双极晶体管的超高速选择器 IC
DOI：
10.1049/el:20020313
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发表时间：
2002
影响因子：
1.1
通讯作者：
E. Sano
中科院分区：
文献类型：
--
作者：
K. Ishii;K. Murata;M. Ida;K. Kurishima;T. Enoki;T. Shibata;E. Sano
设计并制造了一种选择器集成电路（IC）作为评估新型无掺杂发射极 InP/InGaAs 异质结双极晶体管（HBT）性能的基准。使用作者开发的 HBT 实现了选择器门在 86 Gbit/s 下的运行，在集电极电流密度为 50 kA/cm2 时，其 fT 为 140 GHz，fmax 为 200 GHz。这表明InP/InGaAs HBT具有出色的速度性能，可用于制造数据速率接近100Gbit/s的超高速IC。
A selector integrated circuit (IC) as a benchmark to assess the performances of new undoped-emitter InP/InGaAs heterojunction bipolar transistors (HBTs) has been designed and fabricated. Operation of the selector gate at 86 Gbit/s has been achieved using an HBT developed by the authors, which exhibits the fT of 140 GHz and fmax of 200 GHz at a collector current density of 50 kA/cm2. This indicates that InP/InGaAs HBTs have excellent speed performance for making ultra-high-speed ICs with data rates approaching 100 Gbit/s.