Structural properties of a thallium-induced Si(111)-1×1 surface
Structural properties of a thallium-induced Si(111)-1×1 surface
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铊诱导的 Si(111)-1×1 表面的结构性质
DOI：
10.1103/physrevb.69.195311
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发表时间：
2004
影响因子：
3.7
通讯作者：
D. Noh
中科院分区：
文献类型：
--
作者：
Namdong Kim;C. Hwang;Jinwook Chung;T. Kim;Hyunjin Kim;D. Noh
本文报道了用同步辐射x射线散射法测定了Tl诱导的1×1相在Si(111)表面的原子排列。根据对几个晶体截断棒的强度分布的定量分析，我们发现Tl原子占据了T4位，与相邻的Si原子在第一层硅双层中形成了显著的不对称成键几何结构。本研究测得的原子排列，包括Tl-Si键的键长为3.26±0.02ä，与先前报道的一致。我们的结果不仅提供了提高精度的表面成键参数，而且也证实了Tl-Si成键更多地是离子而不是共价的理论预测。
We report on the atomic arrangement of a thallium (Tl) induced 1× 1 phase on a Si (111) surface determined by utilizing synchrotron x-ray scattering. Based on a quantitative analysis of intensity profiles of several crystal truncation rods, we find that Tl adatoms occupy the T 4 sites to produce a significantly asymmetric bonding geometry with neighboring Si atoms in the first silicon bilayer. The atomic arrangement determined in this study, including the bond length of 3.26±0.02 Å for the Tl-Si bonds, agrees quite well with the one reported earlier. Our results not only provide bonding parameters of the surface with an improved accuracy, but also confirm the theoretical prediction that the Tl-Si bonding is more ionic than covalent.