P-TYPE ZINCBLENDE GAN ON GAAS SUBSTRATES
P-TYPE ZINCBLENDE GAN ON GAAS SUBSTRATES
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DOI：
10.1063/1.109848
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发表时间：
1993-08-16
影响因子：
4
通讯作者：
MORKOC, H
中科院分区：
文献类型：
--
作者：
LIN, ME;XUE, G;MORKOC, H
我们报告的p型立方GaN。采用等离子体增强分子束外延技术在邻位（100）GaAs衬底上生长Mg掺杂层。将热升华的Mg与N2载气一起送入电子回旋共振源。在室温下获得了空穴迁移率高达39 cm 2/V s的p型锌掺杂GaN薄膜。通过X射线衍射法证实了膜的立方性质。用二次离子质谱研究了Mg的深度分布。
We report p-type cubic GaN. The Mg-doped layers were grown on vicinal (100) GaAs substrates by plasma-enhanced molecular beam epitaxy. Thermally sublimed Mg was, with N2 carrier gas, fed into an electron-cyclotron resonance source. p-type zinc-blende-structure GaN films were achieved with hole mobilities as high as 39 cm2/V s at room temperature. The cubic nature of the films were confirmed by x-ray diffractometry. The depth profile of Mg was investigated by secondary ions mass spectroscopy.