Effect of dispersion degree of orientation on dielectric properties of (100)-oriented PST thin film
Effect of dispersion degree of orientation on dielectric properties of (100)-oriented PST thin film
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取向分散度对(100)取向PST薄膜介电性能的影响
DOI：
10.1016/j.jpcs.2013.06.017
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发表时间：
2013-12
影响因子：
4
通讯作者：
Du, Piyi
中科院分区：
文献类型：
--
作者：
Han, Gaorong;Song, Chenglu;Ma, Ning;Du, Piyi
(100)采用溶胶-凝胶技术和快速热处理技术在氧化铟锡涂层玻璃衬底上制备了（PbxSr 1 −x）TiO 3（PST）薄膜。通过不同退火温度下的摇摆曲线表征薄膜（100）峰的半高宽，详细研究了不同取向度色散薄膜的介电常数和介电调谐性能。取向分散对可调介电薄膜介电性能的影响。结果表明，溶胶-凝胶法制备的PST薄膜的介电常数随钙钛矿相取向分散度的降低而提高，而非随晶相含量的增加而提高。取向薄膜的介电常数（电容）和优值分别比无规取向薄膜高3-6倍和1倍。
(100) Oriented (PbxSr1−x)TiO3(PST) thin films were prepared on indium tin oxide coated glass substrates by sol–gel technique with rapid thermal processing. The dielectric permittivity and tunability of the thin films with different dispersion degrees of orientation were investigated in detail by characterizing the full width at half maximum of their (100) peak based on rocking curves at different annealing temperatures. Influence of orientation dispersion on dielectric properties was exhibited in the tunable dielectric thin films. It shows that the dielectric constant and hence the tunability of the sol–gel derived PST thin films are improved with the decrease in the dispersion degree of orientation of the perovskite phase other than the increase in the content of crystalline phase in the thin films. The dielectric constant (capacitance) and figure of merit of the oriented thin films are 3–6 times and 1 times higher than that of randomly oriented thin film respectively.
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影响因子：
5.4
作者：
P. Du;L. Tang;Xiaohui Zhao;W. Weng;G. Han
通讯作者：
P. Du;L. Tang;Xiaohui Zhao;W. Weng;G. Han
影响因子：
2.1
作者：
Jong‐Jin Choi;Gun-Tae Park;Hyoun‐Ee Kim;Dal-Young Kim
通讯作者：
Jong‐Jin Choi;Gun-Tae Park;Hyoun‐Ee Kim;Dal-Young Kim
影响因子：
3.2
作者：
Sidney T. Malak;Ryan Clayton-Cox;J. Scheuermann;J. Stehlík;Jian-qing Wang
通讯作者：
Sidney T. Malak;Ryan Clayton-Cox;J. Scheuermann;J. Stehlík;Jian-qing Wang
影响因子：
3
作者：
Q. Chi;W. Li;W. Fei;Y. Zhao
通讯作者：
Q. Chi;W. Li;W. Fei;Y. Zhao
影响因子：
2.1
作者：
Jingfeng Chen;P. Du;Ying Qin;G. Han;W. Weng
通讯作者：
Jingfeng Chen;P. Du;Ying Qin;G. Han;W. Weng