Fano–Rashba effect in quantum dots
Fano–Rashba effect in quantum dots
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DOI：
10.1088/0957-4484/19/19/195401
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发表时间：
2008-03
期刊：
影响因子：
3.5
通讯作者：
P. Orellana;Martin Amado;F. Domínguez‐Adame
中科院分区：
文献类型：
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作者：
P. Orellana;Martin Amado;F. Domínguez‐Adame
我们考虑通过与铁磁引线耦合的 Rashba 量子点进行电子传输。我们证明局域电子态与共振电子态的干扰导致了法诺-拉什巴效应的出现。这种效应的发生是由于自旋极化电子的束缚能级与具有相反自旋极化的电子态连续体的干扰。我们研究了法诺-拉什巴效应作为外加磁场和拉什巴自旋轨道耦合的函数。
We consider the electronic transport through a Rashba quantum dot coupled to ferromagnetic leads. We show that the interference of localized electron states with resonant electron states leads to the appearance of the Fano–Rashba effect. This effect occurs due to the interference of bound levels of spin-polarized electrons with the continuum of electronic states with an opposite spin polarization. We investigate this Fano–Rashba effect as a function of the applied magnetic field and Rashba spin–orbit coupling.