Growth of Si∕β-FeSi2∕Si double-heterostructures on Si(111) substrates by molecular-beam epitaxy and photoluminescence using time-resolved measurements
Growth of Si∕β-FeSi2∕Si double-heterostructures on Si(111) substrates by molecular-beam epitaxy and photoluminescence using time-resolved measurements
复制标题
使用时间分辨测量通过分子束外延和光致发光在 Si(111) 基底上生长 Si∕β-FeSi2∕Si 双异质结构
DOI：
10.1063/1.1774246
复制
发表时间：
2004
影响因子：
3.2
通讯作者：
M. Ichida
中科院分区：
文献类型：
--
作者：
M. Takauji;N. Seki;T. Suemasu;F. Hasegawa;M. Ichida
采用分子束外延（MBE）方法，以反应沉积外延法制备的β-FeSi 2为模板，在Si（111）衬底上生长了高度[110]闪烁[101]取向的半导体二硅化铁β-FeSi 2连续薄膜。最佳MBE生长温度被确定为约750°C。在此温度下，β-FeSi_2（220）S_（202）X射线衍射峰的半高宽最小。随后在500°C下在β-FeSi 2上进行未掺杂Si层的MBE过生长，得到Si scin β-FeSi 2 scinSi双异质结构。在800°C氩气中退火14 h后，在低温下获得了1.55μm的光致发光（PL）。时间分辨荧光光谱分析表明，发光有两个来源，一个是短衰减时间（τ ~ 10 ns），另一个是长衰减时间（τ ~ 100 ns）。短的衰减时间被认为是由于β-FeSi 2中的载流子复合，而长的衰减时间可能是由于Si中与位错相关的D1线。
Highly [110]∕[101]-oriented semiconducting iron disilicide β-FeSi2 continuous films were grown on Si(111) by molecular-beam epitaxy (MBE) using a β-FeSi2 epitaxial template formed by reactive deposition epitaxy. The optimum MBE growth temperature was determined to be about 750°C. At this temperature, the full width at half maximum β-FeSi2(220)∕(202) x-ray diffraction peak was at a minimum. Subsequent MBE overgrowth of an undoped Si layer was performed on the β-FeSi2 at 500°C, resulting in the Si∕β-FeSi2∕Si double heterostructure. After annealing the wafers at 800°C in Ar for 14h, 1.55μm photoluminescence (PL) was obtained at low temperatures. Time-resolved PL measurements elucidated that the luminescence originated from two sources, one with a short decay time (τ∼10ns) and the other with a long decay time (τ∼100ns). The short decay time was thought to be due to carrier recombination in β-FeSi2, whereas the long decay time was due probably to a dislocation-related D1 line in Si.
离子束合成 β-FeSi2/Si 的光致发光增强
DOI：
--
发表时间：
2007
期刊：
影响因子：
--
作者：
T. Jonishi;Y. Ando;and Y. Maeda
通讯作者：
and Y. Maeda