Fabrication and characterisation of suspended narrow silicon nanowire channels for low-power nano-electro-mechanical (NEM) switch applications
Fabrication and characterisation of suspended narrow silicon nanowire channels for low-power nano-electro-mechanical (NEM) switch applications
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DOI：
10.1016/j.mee.2015.02.047
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发表时间：
2015-09-01
影响因子：
2.3
通讯作者：
Mizuta, H.
中科院分区：
文献类型：
--
作者：
Boodhoo, L.;Crudgington, L.;Mizuta, H.
悬浮硅纳米线与窄（类似于10 nm）的导电沟道的制造和表征的低功耗纳米机电（NEM）开关器件的进一步发展，使用CMOS兼容的制造。采用非晶硅牺牲层和二氟化氙刻蚀的双悬浮工艺制备热氧化悬浮硅纳米线沟道。器件电流-电压特性证明了重掺杂纳米线的耗尽模式操作，其开/关比为10（5），阈值电压为-1.8V。在平面机电拉入到侧栅极被证明并确认与有限元分析一致。(C)2015爱思唯尔B. V.保留所有权利。
Suspended silicon nanowires with narrow (similar to 10 nm) conduction channel are fabricated and characterised for further development of low power nano-electro-mechanical (NEM) switching devices using CMOS compatible fabrication. Double suspension fabrication process using an amorphous silicon sacrificial layer and xenon difluoride etching is employed for thermally-oxidised suspended Si nanowire channels. Device current-voltage characteristics demonstrate depletion mode operation of heavy doped nanowires with an on/off ratio of 10(5) and a threshold voltage of -1.8 V. In plane electromechanical pull-in to side gate is demonstrated and confirmed to be consistent with finite element analysis. (C) 2015 Elsevier B.V. All rights reserved.