Synthesis of graphene on silicon carbide substrates at low temperature
Synthesis of graphene on silicon carbide substrates at low temperature
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DOI：
10.1016/j.carbon.2009.03.051
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发表时间：
2009-07-01
期刊：
影响因子：
10.9
通讯作者：
Tsai, Chuen-Horng
中科院分区：
文献类型：
--
作者：
Juang, Zhen-Yu;Wu, Chih-Yu;Tsai, Chuen-Horng
本文提出了一种用于在低温（750摄氏度）下在碳化硅衬底上合成毫米级石墨烯膜的方法。将镍薄膜涂覆在碳化硅衬底上，并用于在快速加热下提取衬底的碳原子。在冷却阶段，碳原子在Ni的自由表面上沉淀并形成单层或少层石墨烯。结果表明，石墨烯的层数可以通过适当的工艺条件进一步控制。与单晶碳化硅上的外延石墨烯合成相反，这里制备的石墨烯在整个Ni涂覆区域上是连续的，并且可以更容易地从衬底上剥离以进行进一步表征。我们的方法的大规模，低温和可转移的特点表明了未来石墨烯应用的潜力。(C)2009爱思唯尔有限公司保留所有权利。
A method for the synthesis of millimeter-scaled graphene films on silicon carbide substrates at low temperatures (750 degrees C) is presented herein. Ni thin films were coated on a silicon carbide substrate and used to extract the substrate's carbon atoms under rapid heating. During the cooling stage, the carbon atoms precipitated on the free surface of the Ni and formed single-layer or few-layer graphene. The result shows that the number of graphene layers might be further controlled by appropriate process conditions. In contrast to the epitaxial graphene synthesis on single crystal silicon carbide, the graphene prepared here are continuous over the entire Ni-coated area, and can be stripped from the substrate much more easily for further characterization. The large-scaled, low temperature and transferable features of our method suggest the potential for future graphene-based applications. (C) 2009 Elsevier Ltd. All rights reserved.