Investigation on Single and Split Output Gate Configurations Influence on the GaN-HEMTs Switching Behaviours
Investigation on Single and Split Output Gate Configurations Influence on the GaN-HEMTs Switching Behaviours
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DOI：
10.23919/epe23ecceeurope58414.2023.10264283
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发表时间：
2023-09
期刊：
影响因子：
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通讯作者：
Xuyang Lu;A. Videt;N. Idir;V. Marsic;P. Igic;S. Faramehr
中科院分区：
文献类型：
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作者：
Xuyang Lu;A. Videt;N. Idir;V. Marsic;P. Igic;S. Faramehr
本文研究了功率GaN-HEMT在单输出和分输出两种栅极驱动方式下的开关特性差异。基于仿真和实验结果的分析表明，GaN-HEMT采用分裂输出结构时，开关速度较慢，开关损耗较高。这是因为在GaN-HEMT的导通过程中，栅极驱动器内部的MOSFET的输出电容（Coss）将被充电，并且该充电过程可以降低GaN-HEMT的输入电容（Ciss）的充电速度。此外，栅极电阻和寄生电感是选择用于分析的主要参数，并且它们的分布可以通过增加导通和关断回路的阻抗比来放大这种效应。该研究为GaN-HEMT栅极驱动器和高效率功率模块的设计提供了指导性建议。
This work investigates the power GaN-HEMTs switching behaviour differences resulted from usage of two gate driving configurations: single and split outputs. The analysis based on simulation and experimental results show that GaN-HEMTs could switch slower and cause higher switching losses when the split output configuration is used. This is because the output capacitance (Coss) of MOSFETs inside gate driver will be charged during the turn-on process of GaN-HEMTs, and this charging process can reduce the charging speed of input capacitance (Ciss) of GaN-HEMTs. Moreover, the gate resistance and parasitic inductance are the main parameters selected for analysis, and their distribution can amplify this effect by increasing the impedance ratio of turn-on and turn-off loop. This research provides guiding suggestions for gate driver and high-efficiency GaN-HEMTs power module design.