Field-effect modulation of resistance in VO2 thin film at lower temperature
Field-effect modulation of resistance in VO2 thin film at lower temperature
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DOI：
10.7567/jjap.53.111102
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发表时间：
2014-11-01
影响因子：
1.5
通讯作者：
Pergament, Alexander L.
中科院分区：
文献类型：
--
作者：
Belyaev, Maksim A.;Putrolaynen, Vadim V.;Pergament, Alexander L.
在本文中，我们描述了一个原型的场效应晶体管（FET）的基础上莫特金属-绝缘体转变（MIT）在二氧化钒。已经表明，通过降低沟道的温度，可以实现增加沟道电阻的调制、场效应的增益以及放大因子的增加。当温度从RT降低到-21 ℃时，晶体管放大系数增加了两倍以上。它还表明，沟道电阻的调制是不相关的动态电流通过栅极绝缘体和VO 2沟道的发生。分析和描述了提高VO 2基FET效率的可能解决方案。(C)2014日本应用物理学会
In this paper we describe a prototype of a field effect transistor (FET) based on the Mott metal-insulator transition (MIT) in vanadium dioxide. It has been shown that increasing the modulation of the channel resistance, the gain of the field effect, and an increase of the amplification factor can be achieved by lowering the temperature of the channel. An increase of the transistor amplification factor by more than twice is shown while reducing the temperature from RT down to -21 degrees C. It is also shown that the modulation of the channel resistance is not associated with the occurrence of dynamic current through the gate insulator and the VO2-channel. Possible solutions to increase the efficiency of the VO2-based FET are analyzed L and described. (C) 2014 The Japan Society of Applied Physics