Visualizing memory phenotype development after in vitro stimulation of CD4+ T cells
Visualizing memory phenotype development after in vitro stimulation of CD4+ T cells
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DOI：
10.1006/cimm.1998.1341
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发表时间：
1998-08-25
影响因子：
4.3
通讯作者：
Pelletier, WJ
中科院分区：
文献类型：
--
作者：
Lee, WT;Pelletier, WJ
特异性抗原对初始CD 4细胞的刺激导致增殖和细胞表面标志物表达的变化，因为细胞分化成效应细胞和记忆细胞。一些标记变化（例如，CD 45 RB、CD 44和L-选择素水平的差异）似乎相对稳定，并允许识别记忆T细胞。在这项研究中，我们研究了初始刺激幼稚T细胞后记忆标记物的获得。用荧光染料羧基荧光素二乙酸琥珀酰亚胺酯（CFSE）标记来自DO11.10 TCR转基因小鼠的CD 4（+）T细胞，并用特异性抗原（OVA（323-339））刺激。观察到特异性激活，因为CFSE相关的荧光随着携带DO11.10克隆型的细胞的每次分裂而减少两倍。随着细胞分化为效应/记忆细胞，也可以观察到表型变化。然而，个别表面标记表现出不同的关系，细胞分裂。尽管某些标志物（L-选择素）的变化独立于细胞分裂发生，但其他标志物的变化要么与细胞分裂严格相关（CD 45 RB），要么是细胞分裂的先决条件（CD 4，CD 44）。(C)北京：科学出版社.
Stimulation of naive CD4 cells by specific antigen results in proliferation and changes in cell surface marker expression as the cells differentiate into effector and memory cells. Several of the marker changes (e.g., differences in CD45RB, CD44, and L-selectin levels) appear to be relatively stable and permit the identification of memory T cells. In this study, we examined the acquisition of memory markers after the initial stimulation of naive T cells. CD4(+) T cells from DO11.10 TCR transgenic mice were labeled with the fluorescent dye carboxyfluorescein diacetate succinimidyl ester (CFSE) and were stimulated with specific antigen (OVA(323-339)). Specific activation was observed, as CFSE-associated fluorescence was reduced twofold with each division of DO11.10 clonotype-bearing cells. Phenotypic changes could also be observed as the cells differentiated into effector/memory cells. However, individual surface markers exhibited a varied relationship to cell division. Although changes in some markers (L-selectin) occurred independently of cell division, changes in other markers were either strictly related to cell division (CD45RB) or were a prerequisite to cell division (CD4, CD44). (C) 1998 Academic Press.