Influence of substrates on the elastic reaction of films for the microindentation tests
Influence of substrates on the elastic reaction of films for the microindentation tests
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DOI：
10.1016/0040-6090(95)08498-3
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发表时间：
1996-09-01
期刊：
影响因子：
2.1
通讯作者：
Kim, MT
中科院分区：
文献类型：
--
作者：
Kim, MT
利用载荷-深度敏感显微硬度计研究了基片对薄膜弹性反应的影响。为了研究，在射频（r.f.）对于第一组样品，在硅晶片和玻璃带上同时使用六甲基二硅烷和氧的等离子体，对于第二组样品，在硅晶片上使用不同的膜厚度。氧化硅膜的杨氏模量被测量为对于相同膜厚度的不同衬底是不同的。对于相同的衬底，氧化硅膜的杨氏模量随着膜厚度的增加而降低，以接近氧化硅膜的杨氏模量。利用弹性力学的基本理论，在假设材料与基体完全粘附的条件下，研究了平面准无限大受法向点载荷时的弹性变形。使用导出的方程重新计算膜的杨氏模量，考虑法向点载荷对平坦准无限表面的弹性变形。重新计算的膜杨氏模量为67 +/-1.5GPa几乎与膜厚度无关，这与热生长氧化硅的模量值相当。
The influence of substrates on the elastic reaction of a thin film was investigated using a load- and depth-sensing microhardness tester. For the investigation silicon oxide films were produced in a radio frequency (r.f.) plasma with hexamethyldisilane and oxygen, on silicon wafers and glass ribbons simultaneously for the first set of samples and on silicon wafers but with various film thickness for the second set. The Young's moduli of the silicon oxide films were measured to be different for the different substrates for the same thickness of film. The Young's moduli of the silicon oxide films decreased for the same substrate with increasing film thickness to approach the Young's modulus of a silicon oxide film. The elastic deformation was considered for the normal point load to a flat quasi-infinite surface using an elementary theory of elasticity under the assumption of perfect adhesion between the him and substrate. The Young's modulus of the film was recalculated using the equation derived, considering the elastic deformation of the normal point load to a flat quasi-infinite surface. The recalculated film Young's modulus of 67 +/- 1.5 GPa was nearly independent of the film thickness, which is comparable with the modulus value of thermally grown silicon oxide.