Mechanisms affecting the photoluminescence spectra of GaInNAs after post-growth annealing
Mechanisms affecting the photoluminescence spectra of GaInNAs after post-growth annealing
复制标题
生长后退火后影响GaInNAs光致发光光谱的机制
DOI：
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发表时间：
2002
期刊：
影响因子：
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通讯作者：
A. Guzmán
中科院分区：
文献类型：
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作者：
É. Tournié;M. Pinault;A. Guzmán
利用光致发光光谱和x射线衍射研究了非原位生长后退火对一系列被不同势垒层限制的Ga(In)(N)As三元和四元量子阱（QWs）性质的影响。我们发现，低生长温度而不是氮本身，是造成Ga(In)NAs量子阱低辐射效率的主要原因。此外，生长后退火仅在季系GaInNAs量子阱中引起了光致发光线的蓝移，而x射线衍射显示其成分没有变化。我们的结论是，在退火过程中，在GaInNAs四元材料中出现了n键构型的局部重组。
We have investigated by photoluminescence spectroscopy and x-ray diffraction the influence of ex situ postgrowth annealing on the properties of a series of dedicated Ga(In)(N)As ternary and quaternary quantum wells (QWs) confined by various barrier layers. We show that the low growth temperature and not N per se, is largely responsible for the low radiative efficiency of Ga(In)NAs QWs. Furthermore, postgrowth annealing induces a blueshift of the photoluminescence line in the case of quaternary GaInNAs QWs only, while x-ray diffraction reveals the absence of compositional change. We conclude with the occurrence of a local reorganization of the N-bonding configuration within the GaInNAs quaternary material during annealing.