Re-Examining TID Hardness Assurance Test Protocols for SiGe HBTs
Re-Examining TID Hardness Assurance Test Protocols for SiGe HBTs
复制标题
DOI：
10.1109/tns.2009.2032857
复制
发表时间：
2009-12
影响因子：
1.8
通讯作者：
P. Cheng;J. Pellish;M. Carts;S. Phillips;E. Wilcox;T. Thrivikraman;L. Najafizadeh;J. Cressler;P. Marshall
中科院分区：
文献类型：
--
作者：
P. Cheng;J. Pellish;M. Carts;S. Phillips;E. Wilcox;T. Thrivikraman;L. Najafizadeh;J. Cressler;P. Marshall
We investigate the applicability of current total ionizing dose (TID) test protocols in the context of advanced transistor technologies such as Silicon-Germanium heterojunction bipolar transistors(SiGe HBTs). In SiGe HBTs, an unexpected shift in collector current is observed during total dose irradiation. Using both device and circuit measurements, we investigate this phenomenon and assess its potential importance in hardness assurance of SiGe components. TCAD simulations were performed to explain the observed current shifts.
