Thermoelectric Behavior of Sb- and Al-Doped n-Type Mg2Si Device Under Large Temperature Differences
Thermoelectric Behavior of Sb- and Al-Doped n-Type Mg2Si Device Under Large Temperature Differences
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DOI：
10.1007/s11664-010-1489-5
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发表时间：
2011-01
影响因子：
2.1
通讯作者：
T. Sakamoto;T. Iida;Shota Kurosaki;K. Yano;Hirohisa Taguchi;K. Nishio;Y. Takanashi
中科院分区：
文献类型：
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作者：
T. Sakamoto;T. Iida;Shota Kurosaki;K. Yano;Hirohisa Taguchi;K. Nishio;Y. Takanashi
研究了由熔融商业掺杂多晶Mg 2Si制备的Sb和Al掺杂n型Mg 2Si元件的热电（TE）特性。TE器件采用等离子体活化烧结（PAS）技术制备。为了完成器件，在烧结过程中在它们的每一端上制造Ni电极。为了实现用于大温差的耐用器件，将结晶稳定的Sb掺杂的Mg 2Si（Sb-Mg 2Si）暴露于较高温度，并且将Al掺杂的Mg 2Si（Al-Mg 2Si）暴露于较低温度。该装置由Sb-Mg 2Si和Al-Mg 2Si的片段组成，其尺寸为以下比例：Sb-Mg 2Si：Al-Mg 2Si = 4：1、1：1和1：4。仅由Sb-Mg 2Si组成的器件试样即使在老化1000 h后也没有表现出明显的劣化，而一些分段试样，例如Sb-Mg 2Si：Al-Mg 2Si = 1：1和1：4的那些，在大Δ T范围内遭受输出电流的显著下降。Sb-Mg 2Si：Al-Mg 2Si = 1：1和1：4，尺寸为2 mm × 2 mm × 10 mm的样品在873 K和373 K的高温和低温下的实测功率分别为50.7 mW和49.5 mW。对于仅由Sb-Mg 2Si组成的样品，证实了55 mW的功率。在相同Δ T范围内进行长达1000 h的老化测试，结果表明输出功率下降在103%至20%之间。
The thermoelectric (TE) characteristics of Sb- and Al-dopedn-type Mg2Si elemental devices fabricated using material produced from molten commercial doped polycrystalline Mg2Si were examined. The TE devices were prepared using a plasma-activated sintering (PAS) technique. To complete the devices, Ni electrodes were fabricated on each end of them during the sintering process. To realize durable devices for large temperature differences, thermodynamically stable Sb-doped Mg2Si (Sb-Mg2Si) was exposed to the higher temperature and Al-doped Mg2Si (Al-Mg2Si) was exposed to the cooler temperature. The devices consisted of segments of Sb-Mg2Si and Al-Mg2Si with sizes in the following ratios: Sb-Mg2Si:Al-Mg2Si = 4:1, 1:1, and 1:4. A device specimen composed solely of Sb-Mg2Si showed no notable deterioration even after aging for 1000 h, while some segmented specimens, such as those with Sb-Mg2Si:Al-Mg2Si = 1:1 and 1:4, suffered from a considerable drop in output current over the large ΔTrange. The observed power generated by specimens with Sb-Mg2Si:Al-Mg2Si = 1:1 and 1:4 and sizes of 2 mm × 2 mm × 10 mm were 50.7 mW and 49.5 mW, respectively, with higher and lower temperatures of 873 K and 373 K, respectively. For the sample composed solely of Sb-Mg2Si, a power of 55 mW was demonstrated. An aging test for up to 1000 h for the same ΔTrange indicated drops in output power of between ∼3% and 20%.