Evaluation of Silicon Ingot with Addition of SiCl4 in Atmosphere during Unidirectional Solidification
Evaluation of Silicon Ingot with Addition of SiCl4 in Atmosphere during Unidirectional Solidification
复制标题
气氛中单向凝固过程中添加SiCl4硅锭的评价
DOI：
10.1109/jphotov.2013.2295175
复制
发表时间：
2014
影响因子：
3
通讯作者：
and A. Ogura
中科院分区：
文献类型：
--
作者：
T. Tachibana;K. Sato;H. Kusunoki;S. Sakuragi;Y. Ohshita;H ;Ono;and A. Ogura
在晶体生长过程中，在气氛中加入SiCl4可以抑制硅锭边缘的晶体缺陷和杂质。采用定向凝固技术生长了具有籽晶结构的单晶硅锭。注入SiCl4后，钢锭中的晶界大部分为非活性的Σ3。钢锭顶端和边缘无小角度晶界。添加SiCl4后，碳浓度降低到不添加SiCl4时的一半以下。即使在钢锭表面也没有碳的析出，生长出的钢锭表面具有金属光泽。
Adding SiCl4to the atmosphere during the growth of a crystal suppressed crystalline defects and impurities from the edge of silicon ingots. Crystalline silicon ingots with seed crystal were grown by using the unidirectional solidification technique. Most of the grain boundaries were inactive Σ3 in the ingot with the SiCl4injection. There were no small-angle grain boundaries at the top and edge of ingots. The carbon concentration with SiCl4was decreased to less than half of that without the SiCl4injection. Carbon precipitation did not occur even at the surface of ingots and the surface of grown ingots had a metallic luster.