High-responsivity vertical-illumination Si/Ge uni-traveling-carrier photodiodes based on silicon-on-insulator substrate.
High-responsivity vertical-illumination Si/Ge uni-traveling-carrier photodiodes based on silicon-on-insulator substrate.
复制标题
基于绝缘体上硅衬底的高响应度垂直照明Si/Ge单行载流子光电二极管
DOI：
10.1038/srep27743
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发表时间：
2016-06-09
影响因子：
4.6
通讯作者：
Liu W
中科院分区：
文献类型：
--
作者：
Li C;Xue C;Liu Z;Cong H;Cheng B;Hu Z;Guo X;Liu W
Si/Ge单向载流子光电二极管在克服空间电荷效应和抑制热效应的情况下，具有较高的输出电流。在许多应用中，高电流有利于增加各种微波光子系统的动态范围和简化高比特率数字接收机。从封装的角度来看，具有垂直照明配置的探测器可以通过拾取和放置工具轻松处理，并且是制造光接收器模块的热门选择。然而，垂直照明Si/Ge单向传播载波（UTC）器件受到高速和高响应度之间的相互约束。本文报道了一种基于绝缘体上硅衬底的高响应度垂直照明Si/Ge UTC光电二极管。当单层减反射涂层的透射率达到最大时，由于相长干涉，器件的最大吸收效率是硅衬底的1.45倍。Si/Ge UTC光电二极管在1550 nm处具有0.18 A/W的主导响应度，即使在Ge吸收层薄25%的情况下也提高了50%。
Si/Ge uni-traveling carrier photodiodes exhibit higher output current when space-charge effect is overcome and the thermal effects is suppressed. High current is beneficial for increasing the dynamic range of various microwave photonic systems and simplifying high-bit-rate digital receivers in many applications. From the point of view of packaging, detectors with vertical-illumination configuration can be easily handled by pick-and-place tools and are a popular choice for making photo-receiver modules. However, vertical-illumination Si/Ge uni-traveling carrier (UTC) devices suffer from inter-constraint between high speed and high responsivity. Here, we report a high responsivity vertical-illumination Si/Ge UTC photodiode based on a silicon-on-insulator substrate. When the transmission of the monolayer anti-reflection coating was maximum, the maximum absorption efficiency of the devices was 1.45 times greater than the silicon substrate owing to constructive interference. The Si/Ge UTC photodiode had a dominant responsivity at 1550 nm of 0.18 A/W, a 50% improvement even with a 25% thinner Ge absorption layer.