Schottky and tunneling behavior of Fe/MgO/Ge(100) structures
Schottky and tunneling behavior of Fe/MgO/Ge(100) structures
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Fe/MgO/Ge(100) 结构的肖特基和隧道行为
DOI：
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发表时间：
2010
期刊：
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通讯作者：
J. Moodera
中科院分区：
文献类型：
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作者：
J.;M. Hickey;Joonyeon Chang;J. Moodera
我们研究了具有晶体MgO势垒的ge基肖特基二极管和隧道二极管的界面和电学性质。经过简单的清洗程序，不需要高温退火，x射线数据显示界面光滑，MgO隧道势垒具有高度的纹理。利用自一致场西蒙斯-肖特基电流-电压模型拟合输运特性，得到器件的肖特基势垒和隧道势垒高度以及隧道电流的分布。考虑到每个势垒厚度的费米能级脱蚀和肖特基电流与隧道电流之比，我们发现15a的MgO厚度在该系统中产生了最好的输运特性。
We investigated interface and electrical properties of Ge-based Schottky and tunnel diodes with crystalline MgO barriers. Following a simple cleaning procedure not requiring a high-temperature anneal, x-ray data indicated smooth interfaces and that the MgO tunnel barrier was highly textured. Transport characteristics were fitted using a self-consistent field Simmons–Schottky current-voltage model, yielding the Schottky and tunnel barrier heights for the devices and the distribution of tunneling currents. Considering the Fermi-level depinning and the ratio of Schottky to tunneling currents for each barrier thickness, we find that a MgO thickness of 15 A yields the best transport properties in this system.