Color-Tunable Light-Emitting Diodes Based on Rare Earth Doped Gallium Oxide Films
Color-Tunable Light-Emitting Diodes Based on Rare Earth Doped Gallium Oxide Films
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DOI：
10.1021/acsaelm.3c00587
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发表时间：
2023-07
影响因子：
4.7
通讯作者：
Q. Guo;Katsuhiko Saito;Tooru Tanaka
中科院分区：
文献类型：
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作者：
Q. Guo;Katsuhiko Saito;Tooru Tanaka
色彩可调的发光二极管(LED)提供了广泛的应用，包括增强和虚拟现实显示器、室内照明和建筑照明。实现高效率和高亮度、稳定的发射和全色发射是颜色可调LED非常需要的。然而，传统的传质工艺使实现这一技术具有挑战性，因为它们需要从不同的外延片中提取红、绿和蓝LED芯片。在这篇聚焦文章中，我们回顾了基于稀土掺杂宽禁带Ga2O_3半导体实现颜色可调LED的进展。系统地研究了脉冲激光沉积法制备的稀土(Eu、Er、Tm)掺杂Ga2O3薄膜的结构和光学特性，观察到Eu、Er、Tm掺杂的Ga2O3薄膜分别在红、绿、蓝三个光谱区有较强的发射。基于Eu、Er、Tm共掺的Ga2O3薄膜，我们实现了红、绿、蓝光LED的发展，并利用Eu、Er、Tm共掺的Ga2O3薄膜实现了颜色可调的LED。这些结果显示了稀土掺杂的Ga2O3膜在色彩可调谐LED应用中的巨大潜力。
Color-tunable light-emitting diodes (LEDs) offer a broad spectrum of applications, encompassing augmented and virtual reality displays, indoor lighting, and architectural lighting. Achieving high efficiency and brightness, stable emission, and full-color emission is highly desirable in color-tunable LEDs. However, conventional mass transfer processes have made realizing this technology challenging, because they require extracting red, green, and blue LED chips from different epitaxial wafers. In this spotlight article, we review the progress made toward achieving color-tunable LEDs based on rare earth doped wide bandgap Ga2O3semiconductors. We have systematically studied the structural and optical characteristics of rare earth (Eu, Er, and Tm) doped Ga2O3films grown by pulsed laser deposition and observed strong emissions in the red, green, and blue spectral regions from Eu, Er, and Tm doped Ga2O3films, respectively. We have demonstrated the development of red, green, and blue LEDs based on these Eu, Er, and Tm doped Ga2O3films and achieved color-tunable LEDs using Eu, Er, and Tm codoped Ga2O3films. These results demonstrate the great potential of rare earth doped Ga2O3films for use in color-tunable LED applications.