Fabrication of protonated g-C3N4 nanosheets as promising proton conductive materials
Fabrication of protonated g-C3N4 nanosheets as promising proton conductive materials
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质子化 g-C3N4 纳米片的制备作为有前景的质子传导材料
DOI：
10.1039/c9cc02758k
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发表时间：
2019
影响因子：
4.9
通讯作者：
Zhang Qinghua
中科院分区：
文献类型：
--
作者：
Wang Kangcai;Song Siwei;Zhang Qingfu;Jin Yunhe;Zhang Qinghua
质子化的 g-C3N4 纳米片是通过将含有 g-C3N4 和 95% H2SO4 的混合物在 80 °C 下回流 1 小时来制备的。所得的g-C3N4纳米片表现出与g-C3N4相似的层结构和高吸水能力。他们还描述了在 80 °C 和 98% RH 下高达 1.44 × 10−2 S cm−1 的优异电导率，具有质子导电材料的前景。
Protonated g-C3N4 nanosheets were prepared by refluxing a mixture containing g-C3N4 and 95% H2SO4 at 80 °C for 1 hour. The obtained g-C3N4 nanosheets showed a similar layer structure to that of g-C3N4 and high water adsorption capacities. They also depicted superior conductivities reaching up to 1.44 × 10−2 S cm−1 at 80 °C and 98% RH, with promising features for proton conductivity materials.