X-ray micro-beam focusing system for in situ investigation of single nanowire during MBE growth
X-ray micro-beam focusing system for in situ investigation of single nanowire during MBE growth
复制标题
用于 MBE 生长过程中单纳米线原位研究的 X 射线微束聚焦系统
DOI：
10.1088/1742-6596/425/20/202010
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发表时间：
2013
期刊：
影响因子：
--
通讯作者：
M. Kozu and Y. Nakata
中科院分区：
文献类型：
--
作者：
W. Hu;M. Takahasi;M. Kozu and Y. Nakata
为了原位研究半导体纳米结构的生长，制作了一种三元菲涅耳波带片(FZP)，并将其安装在Spring8的束线11XU上。FZP设计的X射线能量为9.5keV，用于一级衍射，通过在FZP后450 mm插入的顺序分选孔(OSA)进行隔离。该FZP的焦距为650 mm。通过暗场刀口扫描，得到聚焦光束轮廓的半高宽为1.17μm(H)×1.38μm(V)。用这种FZP对生长的单个InAs NW进行了微束衍射，证明了在生长过程中进行原位研究的可行性。
A ternary Fresnel zone plate (FZP) has been fabricated and installed at the beamline 11XU of SPring-8, in the aim of in situ studies on the growth of semiconductor nanostructures. The FZP is designed for an X-ray energy of 9.5 keV for the first-order diffraction, which is isolated by an order sorting aperture (OSA) inserted 450 mm after the FZP. The focal length of this FZP is 650 mm. The full width at half maximum of the focused beam profile was estimated to be 1.17 μm (H)× 1.38 μm (V) by the dark-field knife-edge scan. Using this FZP, micro-beam diffraction of an as-grown single InAs NW was carried out to show the feasibility of in situ study during growth.