Improved anisotropic etching process for industrial texturing of silicon solar cells
Improved anisotropic etching process for industrial texturing of silicon solar cells
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DOI：
10.1016/s0927-0248(98)00180-9
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发表时间：
1999-02-26
影响因子：
6.9
通讯作者：
Nijs, J
中科院分区：
文献类型：
--
作者：
Vazsonyi, E;De Clercq, K;Nijs, J
本文对单晶硅片表面用氢氧化钠和异丙醇溶液织构化进行了实验研究。蚀刻溶液的组成和温度都是基于对具有不同结晶方向的硅样品的蚀刻速率测量来优化的。结果表明，金字塔的密度和尺寸不仅受[1 0 0]方向上硅的刻蚀速率的影响，还受溶液的各向异性因子（[1 0 0]~[1 1 1]方向上硅的刻蚀速率的商）的影响。实验设计和响应面方法被用来提取作为不同的输入参数，如氢氧化钠和异丙醇的浓度和溶液的温度的函数的蚀刻速率。在80 ° C的温度和在[1 0 0]方向上引起相对高的蚀刻速率且各向异性因子为10的组合物下发现了最佳纹理化条件。在蚀刻过程的起始点处，可以通过将添加剂混合到纹理化溶液中来避免金字塔成核的不均匀性。利用这种解决方案，可以通过改变蚀刻时间来调整金字塔尺寸，以便从纹理化硅晶片获得低反射率。基于我们的研究结果，纹理化过程可以稳定相对于大规模的晶圆的再现性。(C)1999 Elsevier Science B. V.保留所有权利。
An experimental study on the surface texturisation of monocrystalline wafers with solutions containing sodium-hydroxide and isopropanol was carried out. Both the composition and the temperature of the etching solution were optimised on the basis of etch-rate measurements on silicon samples having different crystallographic directions. It was found that the density and the size of the pyramids are influenced by the etch-rate of silicon in the [1 0 0] direction and also by the anisotropy factor of the solutions being the quotient of the etch rate in the [1 0 0] to [1 1 1] directions. Design of experiments and response surface methods were used to extract the etch rate as a function of different input parameters, such as the sodium hydroxide and isopropanol concentrations and the temperatures of the solutions. Optimum texturing conditions were found at a temperature of 80 degrees C and a composition which causes a relatively high etch rate in the [1 0 0] direction with an anisotropy factor of 10, At the starting point of the etching process, the inhomogeneity of pyramid nucleation can be avoided by mixing an additive to the texturing solution. With such a solution, the pyramid size can be tuned by varying the etching time in order to obtain a low reflectivity from the textured silicon wafers. Based on our results the texturing process could be stabilised with respect to the reproducibility on a large scale of wafers. (C) 1999 Elsevier Science B.V. All rights reserved.