Mobility and Carrier Density in P-type Gaas Nanowires Measured by Transmission Raman Spectroscopy
Mobility and Carrier Density in P-type Gaas Nanowires Measured by Transmission Raman Spectroscopy
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发表时间：
2011
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通讯作者：
B. Ketterer;E. Uccelli;A. Fontcuberta i Morral
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作者：
B. Ketterer;E. Uccelli;A. Fontcuberta i Morral
半导体纳米线中载流子浓度和迁移率的精确测量仍然是一项具有挑战性的任务。这是它们的一维性质和与霍尔或货车德堡测量不相容的结果。我们提出了一种方法，允许在纳米线的流动性和载流子浓度的直接测定在一个非接触的方式。我们演示了如何前向拉曼散射使声子等离子体相互作用的测量。通过将这种方法应用于p型GaAs纳米线，我们能够直接获得载流子浓度在3.0 10 17和7.4 10 18 cm Ω 3之间的值，室温下的迁移率为31 cm 2（V s）Ω 1。本研究为半导体纳米线等离子体声子相互作用的研究开辟了道路。
The unambiguous measurement of carrier concentration and mobility in semiconductor nanowires remains a challenging task. This is a consequence of their one-dimensional nature and the incompatibility with Hall or van der Pauw measurements. We propose a method that allows the direct determination of mobility and carrier concentration in nanowires in a contact-less manner. We demonstrate how forward Raman scattering enables the measurement of phonon–plasmon interactions. By applying this method to p-type GaAs nanowires, we were able to directly obtain values of the carrier concentration between 3.0 Â 10 17 and 7.4 Â 10 18 cm À3 and a mobility of 31 cm 2 (V s) À1 at room temperature. This study opens the path towards the study of plasmon–phonon interactions in semiconductor nanowires.