Numerical Investigation on Hole-Injection Characteristics of NiO/SiC Heterojunction
Numerical Investigation on Hole-Injection Characteristics of NiO/SiC Heterojunction
复制标题
DOI：
10.1088/1742-6596/2331/1/012002
复制
发表时间：
2022
期刊：
影响因子：
--
通讯作者：
Xu Jianning
中科院分区：
文献类型：
--
作者：
Wang Xi;Li Na;Pu Hongbin;Yang Yingxiang;Hu Jichao;Xu Jianning
Abstract Numerical investigation on hole-injection characteristics of NiO/SiC heterojunction is carried out in this paper. Theory analysis and numerical simulation both indicate the excellent hole-injection characteristic of p-NiO/n-SiC heterojunction. The pn junction diode and pnp phototransistor are constructed and simulated to evaluate hole-injection characteristics p-NiO/n-SiC heterojunction. The results indicate that the p-NiO/n-SiC heterojunction shows great potential advantage in enhancing current gain of pnp phototransistor. By using NiO/SiC heterojunction as the emitter junction, the current gain of SiC based pnp phototransistor can be increased by about 96.3 times.
