A High-Speed and Low-Breakdown-Voltage Silicon Avalanche Photodetector
A High-Speed and Low-Breakdown-Voltage Silicon Avalanche Photodetector
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DOI：
10.1109/lpt.2014.2300853
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发表时间：
2014-03
影响因子：
2.6
通讯作者：
C. Tseng;Ku-Hung Chen;Wei-ting Chen;Ming-Chang M. Lee;N. Na
中科院分区：
文献类型：
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作者：
C. Tseng;Ku-Hung Chen;Wei-ting Chen;Ming-Chang M. Lee;N. Na
通过将叉指型p-i-n结的本征层宽度缩窄至~ 150 nm，实现了具有-6.78 V低击穿电压的硅雪崩光电探测器。它达到了雪崩击穿的物理极限，其中齐纳隧穿过程引起的性能下降可以忽略不计。测量了-4V下的暗电流，并且在850 nm激光照射下获得了在-6.75V下超过1.424 A/W（110）的响应度（增益）。固有带宽被确定为10 GHz，这表明我们的设备是适用于10-Gb/s的高速光接收机应用和超越。
A silicon avalanche photodetector with a low breakdown voltage of -6.78 V is demonstrated by narrowing down the intrinsic layer width of interdigitated p-i-n junctions to ~ 150 nm. It reaches the physical limit of avalanche breakdown in which the performance degradation caused by the Zener tunneling process is negligible. Dark current at -4 V is measured, and a responsivity (gain) exceeding 1.424 A/W (110) at -6.75 V is obtained with an 850-nm laser illumination. The intrinsic bandwidth is determined to be 10 GHz, suggesting our device is applicable for a 10-Gb/s high-speed optical receiver application and beyond.