Fabrication and optical properties of vertically aligned ZnSe nanowire arrays catalyzed by Ga and Ag
Fabrication and optical properties of vertically aligned ZnSe nanowire arrays catalyzed by Ga and Ag
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DOI：
10.1039/c1ce05412k
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发表时间：
2011-09
期刊：
影响因子：
3.1
通讯作者：
Yao Liang;Yin Tao;S. Hark
中科院分区：
文献类型：
--
作者：
Yao Liang;Yin Tao;S. Hark
采用金属-有机化学气相沉积技术，在Ga和Ag催化剂的作用下，在GaAs(111)B衬底上生长了垂直排列的ZnSe纳米线阵列。无论使用何种催化剂，纳米线均为闪锌矿结构，沿<111>B方向生长。然而，发现催化剂影响了阵列的光学性质。Ga催化纳米线的近带边发射光谱(10K)的主峰是与Ga施主结合的激子，而Ag催化的纳米线与Ag受体络合物的光谱有对应的峰。因此，Ga和Ag既可以作为生长ZnSe纳米线的有效催化剂，也可以作为掺杂剂。
Vertically aligned ZnSe nanowire arrays have been grown on GaAs(111)B substrates by metal–organic chemical vapor deposition using Ga and Ag catalysts. Regardless of the catalysts, the nanowires are of zinc blende structure and grow along the 〈111〉B direction. However, the catalysts were found to affect the optical properties of the arrays. The dominant peak in the near-band-edge emission spectrum (10 K) of Ga-catalyzed nanowires is attributed to excitons bound to Ga donors and the corresponding peak in the spectrum of Ag-catalyzed nanowires to Ag acceptor complexes. Thus, Ga and Ag can serve both as an effective catalyst and a dopant for the growth of ZnSe nanowires.