Ultrafast electron transfer dynamics in CdSe/CdTe donor-acceptor nanorods
Ultrafast electron transfer dynamics in CdSe/CdTe donor-acceptor nanorods
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DOI：
10.1021/jp804040r
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发表时间：
2008-08-14
影响因子：
3.7
通讯作者：
Fiebig, Torsten
中科院分区：
文献类型：
--
作者：
Dooley, Chad J.;Dimitrov, Stoichko D.;Fiebig, Torsten
利用飞秒宽带泵浦 - 探测光谱技术实时研究了II型CdSe/CdTe供体 - 受体纳米棒中的光诱导电荷转移动力学。在对CdTe进行光激发（激发波长λ(ex) = 620 nm）后，利用飞秒白光脉冲（探测波长λ(probe) = 350 - 750 nm）测量了带边光学跃迁的态填充信号所产生的光谱漂白。对CdTe最低能态跃迁的激发表明，CdTe和CdSe最低能态1S跃迁的漂白信号以及特征性的载流子转移带都发生了超快变化。我们的研究结果表明，在这些异质材料中，从CdTe到CdSe的界面导带间电子转移发生在500飞秒时间尺度上。
Photoinduced charge transfer dynamics in type-II CdSe/CdTe donor-acceptor nanorods were studied in real-time using femtosecond broadband pump-probe spectroscopy. Following photoexcitation of CdTe (lambda(ex) 620 nm), spectral bleaching from the state-filling signals of the band-edge optical transitions was measured using a femtosecond white light pulse (lambda(probe) = 350-750 nm). Excitation of the lowest energy CdTe transition shows an ultrafast change in the bleaching signals of both the CdTe and CdSe lowest energy IS transitions as well as the characteristic carrier transfer band. Our results indicate that interfacial interconduction band electron transfer CdTe to CdSe occurs on the 500 A time scale in these heteromaterials.