RAMAN-SCATTERING ANALYSIS OF RELAXED GEXSI1-X ALLOY LAYERS
RAMAN-SCATTERING ANALYSIS OF RELAXED GEXSI1-X ALLOY LAYERS
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DOI：
10.1063/1.109481
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发表时间：
1993-04-26
影响因子：
4
通讯作者：
CHU, JO
中科院分区：
文献类型：
--
作者：
MOONEY, PM;DACOL, FH;CHU, JO
We have used Raman scattering to evaluate thick epitaxial GexSi1-x, layers with 0.20 less-than-or-equal-to x less-than-or-equal-to 0.43 grown on Si (100) substrates. We show that a detailed consideration of the composition dependencies of the relative intensities of the various phonon modes can enhance the sensitivity of Raman scattering to variations in composition and strain. We find that samples are uniform on a scale of congruent-to 1 mum laterally and < 1000 angstrom in the growth direction.
