Selective formation of an efficient Er‐O luminescence center in GaAs by metalorganic chemical vapor deposition under an atmosphere containing oxygen
Selective formation of an efficient Er‐O luminescence center in GaAs by metalorganic chemical vapor deposition under an atmosphere containing oxygen
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含氧气氛下金属有机化学气相沉积在 GaAs 中选择性形成高效 Er-O 发光中心
DOI：
10.1063/1.354757
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发表时间：
1993
影响因子：
3.2
通讯作者：
A. Taguchi
中科院分区：
文献类型：
--
作者：
K. Takahei;A. Taguchi
为了研究氧共掺杂对 GaAs 中 Er 发光中心的影响，我们通过低压金属有机化学气相沉积 (MOCVD) 生长了 Er 掺杂的 GaAs，并测量了由于 Er 的 4f 壳层内跃迁而产生的光致发光光谱。在纯氢气氛中生长的样品的光谱很复杂，显示出许多谱线和谱带。另一方面，在含 0.2 ppm 氧的氢气气氛中生长的样品的光谱很简单，并且线条很少。氧共掺杂样品的光谱在 1.5-1.6 μm 区域显示出更高的峰值强度和更高的集成发光强度。二次离子质谱显示氧共掺杂样品的氧浓度较高，表明形成了 Er-O 络合物中心。因此，在合适的MOCVD生长条件下可以选择性地形成一种光学活性高效Er-O配合物发光中心。
To investigate the effects of oxygen codoping on Er luminescence centers in GaAs, we grew Er‐doped GaAs by low‐pressure metalorganic chemical vapor deposition (MOCVD) and measured the photoluminescence spectrum due to the intra‐4f‐shell transition of Er. The spectrum of a sample grown in a pure hydrogen atmosphere was complicated, showing many lines and bands. The spectrum of a sample grown in a hydrogen atmosphere containing 0.2 ppm oxygen, on the other hand, was simple and had few lines. The spectrum of the oxygen‐codoped sample showed higher peak intensities as well as higher integrated luminescence intensity in the 1.5–1.6 μm region. Secondary‐ion mass spectroscopy revealed that the oxygen‐codoped sample had a higher concentration of oxygen, indicating the formation of an Er‐O complex center. One kind of optically active efficient Er‐O complex luminescence center can, therefore, be selectively formed under suitable MOCVD growth conditions.