Electrically Tunable Wafer-Sized Three-Dimensional Topological Insulator Thin Films Grown by Magnetron Sputtering
Electrically Tunable Wafer-Sized Three-Dimensional Topological Insulator Thin Films Grown by Magnetron Sputtering
复制标题
通过磁控溅射生长的电可调晶圆尺寸三维拓扑绝缘体薄膜
DOI：
10.1088/0256-307x/37/5/057301
复制
发表时间：
2020-05-01
影响因子：
3.5
通讯作者：
Teng, Jiao
中科院分区：
文献类型：
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作者：
Guo, Qixun;Wu, Yu;Teng, Jiao
三维拓扑绝缘体由于其强的自旋轨道耦合和独特的表面电子结构而成为各种电子和自旋电子器件的候选材料。快速、低成本制备与传统半导体工艺兼容的大面积TI薄膜是TI实际应用的关键。在这里，我们表明，晶片大小的Bi 2 Te 3家族TI和磁性TI薄膜具有体面的质量和良好的控制的组成和性能可以制备非晶SiO2/Si衬底上磁控共溅射。SiO2/Si衬底使我们能够在p型和n型行为之间电调谐（Bi 1-xSbx）2 Te 3和Cr掺杂（Bi 1-xSbx）2 Te 3 TI膜，从而研究与拓扑表面态相关的现象，例如量子反常霍尔效应（QAHE）。这项工作显着促进了基于TI的电子和自旋电子学应用的设备的制造。
Three-dimensional (3D) topological insulators (TIs) are candidate materials for various electronic and spintronic devices due to their strong spin-orbit coupling and unique surface electronic structure. Rapid, low-cost preparation of large-area TI thin films compatible with conventional semiconductor technology is key to the practical applications of TIs. Here, we show that wafer-sized Bi2Te3 family TI and magnetic TI films with decent quality and well-controlled composition and properties can be prepared on amorphous SiO2/Si substrates by magnetron cosputtering. The SiO2/Si substrates enable us to electrically tune (Bi1-xSbx)2Te3 and Cr-doped (Bi1-xSbx)2Te3 TI films between p-type and n-type behavior and thus study the phenomena associated with topological surface states, such as the quantum anomalous Hall effect (QAHE). This work significantly facilitates the fabrication of TI-based devices for electronic and spintronic applications.