Nanometer-scale metallic grains connected with atomic-scale conductors
Nanometer-scale metallic grains connected with atomic-scale conductors
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DOI：
10.1063/1.1554756
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发表时间：
2003-03-15
影响因子：
3.2
通讯作者：
Davidovic, D
中科院分区：
文献类型：
--
作者：
Anaya, A;Korotkov, AL;Davidovic, D
我们描述了一种通过原子级金点接触将纳米级金粒连接到导线上的技术。这些器件与以前的金属量子点的不同之处在于，导电通道具有相对良好的传输性能。我们研究了库仑阻塞对接触电阻的依赖关系。高阻器件表现为库仑阻塞，低阻器件表现为零偏压电导下降，两者的定量结果与理论一致。我们发现，在样品电阻接近h/e(2)的中间区域，I-V曲线呈现出接触电容对称的库仑阶梯。(C)2003年美国物理研究所。
We describe a technique for connecting a nanometer-scale gold grain to leads by atomic-scale gold point contacts. These devices differ from previous metallic quantum dots in that the conducting channels are relatively well transmitting. We investigate the dependence of the Coulomb blockade on contact resistance. The high-resistance devices display Coulomb blockade and the low-resistance devices display a zero-bias conductance dip, both in quantitative agreement with theory. We find that in the intermediate regime, where the sample resistance is close to h/e(2), the I-V curve displays a Coulomb staircase with symmetric contact capacitances. (C) 2003 American Institute of Physics.