Label free CMOS DNA image sensor based on the charge transfer technique
Label free CMOS DNA image sensor based on the charge transfer technique
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DOI：
10.1016/j.bios.2009.03.031
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发表时间：
2009-06-15
影响因子：
12.6
通讯作者：
Sawada, K.
中科院分区：
文献类型：
--
作者：
Maruyama, Y.;Terao, S.;Sawada, K.
本文介绍了一种无标签和全电子化的32 × 32 CMOS DNA图像传感器，采用1-poly 1-Metal CMOS工艺制造，适合于廉价和高度集成的应用。像素使用电荷转移技术操作。DNA固定和杂交的硅烷涂覆的表面上进行检测，以及在硅烷涂层的变化。在含有22个碱基的DNA分子的固定和杂交后，测量到76.4 +/- 16.5 mV和64.5 +/- 15.7 mV的显著输出电压。根据这些结果，估计固定和杂交的DNA密度。分别为6.3 +/- 11.4 x 10（8）cm（-2）和5.3 +/- 1.3 x 10（8）cm（-2）。DNA检测限经计算约为2.7 × 10（7）cm（-2）分子（22个碱基）。由于其电位可检测性，成功地验证了DNA的固定和杂交。(C)2009 Elsevier B. V.保留所有权利。
This paper describes a label free and fully electronic 32 x 32 CMOS DNA image sensor fabricated in a 1-poly 1-metal CMOS technology, suitable for inexpensive and highly integrated applications. The pixel operates using the charge transfer technique. DNA immobilization and hybridization on the silane-coated surface are detected, as well as variations in the silane coating. Significant output voltages of 76.4 +/- 16.5 mV and 64.5 +/- 15.7 mV were measured after immobilization and hybridization of DNA molecules containing 22 bases. From these results, the immobilized and hybridized DNA densities were estimated. These were 6.3 +/- 11.4 x 10(8) cm(-2) and 5.3 +/- 1.3 x 10(8) cm(-2), respectively. The DNA detection limit was calculated to be approximately 2.7 x 10(7) cm(-2) molecules (22 bases). Thanks to its potentiometric cletectability, the DNA immobilization and hybridization was successfully verified. (C) 2009 Elsevier B.V. All rights reserved.