Effects of rapid thermal annealing on the emission properties of highly uniform self-assembled InAs∕GaAs quantum dots emitting at 1.3μm
Effects of rapid thermal annealing on the emission properties of highly uniform self-assembled InAs∕GaAs quantum dots emitting at 1.3μm
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快速热退火对高度均匀自组装InAs∕GaAs量子点1.3μm发射特性的影响
DOI：
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发表时间：
2007
期刊：
影响因子：
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通讯作者：
Y. Arakawa
中科院分区：
文献类型：
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作者：
Tao Yang;J. Tatebayashi;K. Aoki;M. Nishioka;Y. Arakawa
作者报告了快速热退火 (RTA) 对通过金属有机化学气相沉积在 GaAs 衬底上生长的 1.3μm 高度均匀自组装 InAs 量子点 (QD) 的发射特性的影响。生长后 RTA 实验是在 N2 流下、温度范围为 600 至 900°C 的情况下进行的，持续 30 秒，使用 GaAs 邻近封盖。令人惊讶的是，尽管有封顶，但仍观察到发射峰的大蓝移（在 850°C 时高达约 380meV）（即使在低退火温度下）以及增强的集成光致发光 (PL) 强度。此外，在低退火温度 (<700°C) 下会出现明显的峰展宽，这表明 RTA 并不总是会导致峰变窄，这通常是在具有大的不均匀 PL 线宽的传统 QD 中观察到的。研究了大峰蓝移背后的机制，发现这归因于生长的大尺寸量子点，这导致更大的点势垒界面以及更大的应变......
The authors report the effects of rapid thermal annealing (RTA) on the emission properties of highly uniform self-assembled InAs quantum dots (QDs) emitting at 1.3μm grown on GaAs substrate by metal organic chemical vapor deposition. Postgrowth RTA experiments were performed under N2 flow at temperatures ranging from 600to900°C for 30s using GaAs proximity capping. Surprisingly, in spite of the capping, large blueshifts in the emission peak (up to about 380meV at 850°C) were observed (even at low annealing temperatures) along with enhanced integrated photoluminescence (PL) intensities. Moreover, pronounced peak broadenings occurred at low annealing temperatures (<700°C), indicating that RTA does not always cause peak narrowing, as is typically observed with traditional QDs with large inhomogeneous PL linewidths. The mechanism behind the large peak blueshift was studied and found to be attributed to the as-grown QDs with large size, which cause a larger dot-barrier interface and greater strain in and near ...