Imaging of the silicon on sapphire interface by high‐resolution transmission electron microscopy
Imaging of the silicon on sapphire interface by high‐resolution transmission electron microscopy
复制标题
通过高分辨率透射电子显微镜对蓝宝石界面上的硅进行成像
DOI：
--
复制
发表时间：
1981
期刊：
影响因子：
--
通讯作者：
J. Aranovich
中科院分区：
文献类型：
--
作者：
F. Ponce;J. Aranovich
用高分辨电子显微镜研究了CVD硅在(1102)蓝宝石衬底上的硅-蓝宝石界面。给出了界面的截面图像，其中硅晶格和蓝宝石晶格被直接分辨。图像显示，界面是平面的，分辨率极限(小于3A)是陡峭的。缺陷各向异性是明显的，并且可以与硅层的[100]方向相对于衬底的法线倾斜有关。
The silicon‐sapphire interface of CVD silicon on a (1102) sapphire substrate has been studied by high‐resolution transmission electron microscopy. Cross‐section images of the interface are presented where the silicon and sapphire lattices are directly resolved. The images show that the interface is planar and abrupt to the limit of resolution (less than 3 A). Defect anisotropy is evident and can be linked to tilt of the [100] direction of the silicon layer with respect to the normal to the substrate.