Spin transport and accumulation in the persistent photoconductor Al0.3Ga0.7As
Spin transport and accumulation in the persistent photoconductor Al0.3Ga0.7As
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DOI：
10.1063/1.4802259
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发表时间：
2013-04
影响因子：
4
通讯作者：
J. Misuraca;Joon-Il Kim;Jun Lu;K. Meng;Lin Chen;Xuezhe Yu;Jianhua Zhao;P. Xiong;S. V. Moln'ar-S.-V.-Moln
中科院分区：
文献类型：
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作者：
J. Misuraca;Joon-Il Kim;Jun Lu;K. Meng;Lin Chen;Xuezhe Yu;Jianhua Zhao;P. Xiong;S. V. Moln'ar-S.-V.-Moln
利用横向自旋输运装置测量了高Si掺杂Al_（0.3）Ga_（0.7）As中的电自旋输运和积累。持久的光电导性允许通过光掺杂原位调节沟道材料的有效载流子密度。Hanle效应的测量完成在各种载流子密度，和测量产生的自旋寿命的数量级纳秒，一个数量级小于散装砷化镓。这些测量结果表明，这种方法可以用来获得自旋寿命如何依赖于载流子密度在半导体跨金属-绝缘体过渡的详细描述。
Electrical spin transport and accumulation have been measured in highly Si doped Al0.3Ga0.7As utilizing a lateral spin transport device. Persistent photoconductivity allows for the tuning of the effective carrier density of the channel material in situ via photodoping. Hanle effect measurements are completed at various carrier densities, and the measurements yield spin lifetimes on the order of nanoseconds, an order of magnitude smaller than in bulk GaAs. These measurements illustrate that this methodology can be used to obtain a detailed description of how spin lifetimes depend on carrier density in semiconductors across the metal-insulator transition.