Investigations of atomic configurations of 60 degrees basal dislocations in wurtzite GaN film by high-resolution transmission electron microscopy
Investigations of atomic configurations of 60 degrees basal dislocations in wurtzite GaN film by high-resolution transmission electron microscopy
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高分辨透射电镜研究纤锌矿GaN薄膜中60°基位错的原子构型
DOI：
10.1080/09500839.2016.1181279
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发表时间：
2016
影响因子：
1.2
通讯作者：
Ge Binghui
中科院分区：
文献类型：
--
作者：
Chang Yunjie;Wang Yumei;Deng Zhen;Chen Hong;Ge Binghui
使用 200 kV 高分辨率 (HR) 透射电子显微镜观察在 Si (111) 衬底上生长的 GaN 外延膜。在 HR 图像中发现了完美和解离的 60° 基底位错。利用图像反卷积方法，将HR图像转换为分辨率提高的结构图，然后确定完全位错和部分位错的原子构型。随后，推导了解离位错可能的解离方案。
GaN epitaxial films grown on Si (111) substrates were observed using a 200 kV high-resolution (HR) transmission electron microscope. Both perfect and dissociated 60° basal dislocations were found in HR images. By utilizing the image deconvolution method, the HR images were transformed into structure maps with an improved resolution, and then the atomic configurations of perfect and partial dislocations were determined. Afterwards, the possible dissociation schemes for the dissociated dislocations were derived.