Performance Improvement of Hf0.5Zr0.5O2-Based Ferroelectric-Field-Effect Transistors With ZrO2 Seed Layers
Performance Improvement of Hf0.5Zr0.5O2-Based Ferroelectric-Field-Effect Transistors With ZrO2 Seed Layers
复制标题
具有 ZrO2 种子层的 Hf0.5Zr0.5O2 基铁电场效应晶体管的性能改进
DOI：
10.1109/led.2019.2903641
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发表时间：
2019-05-01
影响因子：
4.9
通讯作者：
Zhou, Yichun
中科院分区：
文献类型：
--
作者：
Xiao, Wenwu;Liu, Chen;Zhou, Yichun
介绍了一种具有ZrO2种子层的HZO基铁电场效应晶体管（FeFET）。结果表明，ZrO2种子层能有效地改善（氧化铪锆）HZO薄膜的铁电性能。有ZrO2种子层的金属-铁电-绝缘体-半导体（MFIS）结构的剩余极化和矫顽力电压比没有种子层的结构大。此外，有ZrO2种子层的ffet在传输特性上显示出比没有种子层的ffet更宽的逆时针磁滞回线，实现了约2.8 V的大存储窗口。这些结果验证了ZrO2种子层在提高FeFET性能方面的优势，值得进一步研究。
Hf0.5Zr0.5O2(HZO)-based ferroelectric-field-effect transistor (FeFET) with a ZrO2 seed layer was demonstrated. It was found that the ZrO2 seed layer could effectively improve the ferroelectric properties of the (hafnium zirconium oxide) HZO thin film. The remanent polarization and the coercive voltage of the metal-ferroelectric-insulator-semiconductor (MFIS) structure with the ZrO2 seed layer were larger than those without the seed layer. Moreover, the FeFET with the ZrO2 seed layer showed wider counterclockwise hysteresis loops in the transfer characteristics than that without the seed layer, achieving a large memory window of about 2.8 V. These results validate the advantages of the ZrO2 seed layer in promotion of FeFET performance and thus warrant further study.