A High Efficiency Rectenna Element usingE-pHEMT Technology
A High Efficiency Rectenna Element usingE-pHEMT Technology
复制标题
采用E-pHEMT技术的高效整流天线元件
DOI:
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发表时间:
2004
期刊:
影响因子:
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通讯作者:
A. Tazón
中科院分区:
文献类型:
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作者:
C. Gómez;J. A. García;A. Mediavilla;A. Tazón
In this paper, a high-efficiency rectifying
antenna (rectenna) element, based on a novel E-pHEMT
detector, is proposed. The slightly positive threshold voltage
in this technology, allows its use on resistive detectors
without applying an auxiliary gate bias. Based on an
adequate selection of the DC load resistor, as well as the
drain and gate impedance conditions, the losses on the RF to
DC conversion process are reduced. A high gain aperture
coupled patch is finally designed, assuring optimum
impedance values at the fundamental and second harmonic.
Using a rectenna loading of 47 , a 85.4% measured overall
efficiency is achieved.