Deposition of palladium films by a novel supercritical fluid transport-chemical deposition process
Deposition of palladium films by a novel supercritical fluid transport-chemical deposition process
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通过新型超临界流体传输化学沉积工艺沉积钯膜
DOI：
10.1016/0025-5408(91)90118-6
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发表时间：
1991
影响因子：
5.4
通讯作者：
R. Sievers
中科院分区：
文献类型：
--
作者：
B. Hybertson;Brian N. Hansen;R. Barkley;R. Sievers
采用超临界流体输运-化学沉积法，以β-二酮金属配合物双（2，2，7-三甲基-3，5-辛二酮）钯（II）为催化剂，热解沉积钯。在740 °C的衬底温度下以95 nm/min的速率进行沉积。X射线衍射和电子探针分析的反射膜上沉积的熔融石英基板表明，它们含有多晶钯。该膜是导电的，但导电性显著低于体相钯。在（100）Si衬底上沉积的薄膜的X射线衍射表明，形成了硅化钯。
Palladium was pyrolytically deposited by a supercritical fluid transport-chemical deposition method using the metal β-diketonate complex bis-(2,2,7-trimethyl-3,5-octanedionato)palladium(II). Deposition at a rate of 95 nm/min occurred at a substrate temperature of 740 °C. X-ray diffraction and electron microprobe analyses of the reflective films that were deposited on fused silica substrates showed that they contained polycrystalline palladium. The films were electrically conductive, but conductivity was substantially lower than that for bulk palladium. X-ray diffraction of the films deposited on (100) Si substrates showed that palladium silicide was formed.